JPS5144871B2 - - Google Patents

Info

Publication number
JPS5144871B2
JPS5144871B2 JP46074851A JP7485171A JPS5144871B2 JP S5144871 B2 JPS5144871 B2 JP S5144871B2 JP 46074851 A JP46074851 A JP 46074851A JP 7485171 A JP7485171 A JP 7485171A JP S5144871 B2 JPS5144871 B2 JP S5144871B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP46074851A
Other languages
Japanese (ja)
Other versions
JPS4841259A (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP46074851A priority Critical patent/JPS5144871B2/ja
Priority to US00291570A priority patent/US3846166A/en
Publication of JPS4841259A publication Critical patent/JPS4841259A/ja
Publication of JPS5144871B2 publication Critical patent/JPS5144871B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0041Etching of the substrate by chemical or physical means by plasma etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05Patterning and lithography; Masks; Details of resist
    • H05K2203/0548Masks
    • H05K2203/0554Metal used as mask for etching vias, e.g. by laser ablation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4652Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Electrodes Of Semiconductors (AREA)
JP46074851A 1971-09-25 1971-09-25 Expired JPS5144871B2 (en])

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP46074851A JPS5144871B2 (en]) 1971-09-25 1971-09-25
US00291570A US3846166A (en) 1971-09-25 1972-09-25 Method of producing multilayer wiring structure of integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46074851A JPS5144871B2 (en]) 1971-09-25 1971-09-25

Publications (2)

Publication Number Publication Date
JPS4841259A JPS4841259A (en]) 1973-06-16
JPS5144871B2 true JPS5144871B2 (en]) 1976-12-01

Family

ID=13559219

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46074851A Expired JPS5144871B2 (en]) 1971-09-25 1971-09-25

Country Status (2)

Country Link
US (1) US3846166A (en])
JP (1) JPS5144871B2 (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0019391A1 (en) * 1979-05-12 1980-11-26 Fujitsu Limited Improvement in method of manufacturing electronic device having multilayer wiring structure

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1445591A (en) * 1973-03-24 1976-08-11 Int Computers Ld Mounting integrated circuit elements
US3930913A (en) * 1974-07-18 1976-01-06 Lfe Corporation Process for manufacturing integrated circuits and metallic mesh screens
US3934335A (en) * 1974-10-16 1976-01-27 Texas Instruments Incorporated Multilayer printed circuit board
FR2354617A1 (fr) * 1976-06-08 1978-01-06 Electro Resistance Procede pour la fabrication de resistances electriques a partir de feuilles ou de films metalliques et resistances obtenues
US4140572A (en) * 1976-09-07 1979-02-20 General Electric Company Process for selective etching of polymeric materials embodying silicones therein
JPS5512131A (en) * 1978-07-11 1980-01-28 Hitachi Chem Co Ltd Preparation of polyamic acid for semiconductor treatment
US4307179A (en) * 1980-07-03 1981-12-22 International Business Machines Corporation Planar metal interconnection system and process
JPS5797970U (en]) * 1980-12-08 1982-06-16
US4417393A (en) * 1981-04-01 1983-11-29 General Electric Company Method of fabricating high density electronic circuits having very narrow conductors
US4487993A (en) * 1981-04-01 1984-12-11 General Electric Company High density electronic circuits having very narrow conductors
US4423547A (en) 1981-06-01 1984-01-03 International Business Machines Corporation Method for forming dense multilevel interconnection metallurgy for semiconductor devices
US4396458A (en) * 1981-12-21 1983-08-02 International Business Machines Corporation Method for forming planar metal/insulator structures
US4479991A (en) * 1982-04-07 1984-10-30 At&T Technologies, Inc. Plastic coated laminate
GB2137808A (en) * 1983-04-06 1984-10-10 Plessey Co Plc Integrated circuit processing method
US4656050A (en) * 1983-11-30 1987-04-07 International Business Machines Corporation Method of producing electronic components utilizing cured vinyl and/or acetylene terminated copolymers
ATE56310T1 (de) * 1984-06-27 1990-09-15 Contraves Ag Verfahren zur herstellung eines basismaterials fuer eine hybridschaltung.
US4599136A (en) * 1984-10-03 1986-07-08 International Business Machines Corporation Method for preparation of semiconductor structures and devices which utilize polymeric dielectric materials
US4568601A (en) * 1984-10-19 1986-02-04 International Business Machines Corporation Use of radiation sensitive polymerizable oligomers to produce polyimide negative resists and planarized dielectric components for semiconductor structures
US4751563A (en) * 1984-11-05 1988-06-14 International Business Machines, Corp. Microminiaturized electrical interconnection device and its method of fabrication
US4789760A (en) * 1985-04-30 1988-12-06 Advanced Micro Devices, Inc. Via in a planarized dielectric and process for producing same
US4764644A (en) * 1985-09-30 1988-08-16 Microelectronics Center Of North Carolina Microelectronics apparatus
US4667404A (en) * 1985-09-30 1987-05-26 Microelectronics Center Of North Carolina Method of interconnecting wiring planes
JPH069222B2 (ja) * 1986-01-07 1994-02-02 日立化成工業株式会社 多層配線構造の製造法
JPH0763064B2 (ja) * 1986-03-31 1995-07-05 株式会社日立製作所 Ic素子における配線接続方法
US4681655A (en) * 1986-11-24 1987-07-21 Microelectronics And Computer Technology Corporation Electrical interconnect support system with low dielectric constant
US4740410A (en) * 1987-05-28 1988-04-26 The Regents Of The University Of California Micromechanical elements and methods for their fabrication
US4849070A (en) * 1988-09-14 1989-07-18 The United States Of America As Represented By The Secretary Of The Army Process for fabricating three-dimensional, free-standing microstructures
US4920639A (en) * 1989-08-04 1990-05-01 Microelectronics And Computer Technology Corporation Method of making a multilevel electrical airbridge interconnect
US5000818A (en) * 1989-08-14 1991-03-19 Fairchild Semiconductor Corporation Method of fabricating a high performance interconnect system for an integrated circuit
US5117276A (en) * 1989-08-14 1992-05-26 Fairchild Camera And Instrument Corp. High performance interconnect system for an integrated circuit
JP2551224B2 (ja) * 1990-10-17 1996-11-06 日本電気株式会社 多層配線基板および多層配線基板の製造方法
US5332469A (en) * 1992-11-12 1994-07-26 Ford Motor Company Capacitive surface micromachined differential pressure sensor
US5258097A (en) * 1992-11-12 1993-11-02 Ford Motor Company Dry-release method for sacrificial layer microstructure fabrication
US5316619A (en) * 1993-02-05 1994-05-31 Ford Motor Company Capacitive surface micromachine absolute pressure sensor and method for processing
US5410107A (en) 1993-03-01 1995-04-25 The Board Of Trustees Of The University Of Arkansas Multichip module
US5369544A (en) * 1993-04-05 1994-11-29 Ford Motor Company Silicon-on-insulator capacitive surface micromachined absolute pressure sensor
DE4423396C2 (de) * 1994-07-04 2001-10-25 Fraunhofer Ges Forschung Verfahren zum Herstellen einer mikromechanischen Oberflächenstruktur
DE19522004A1 (de) * 1995-06-21 1997-01-02 Inst Mikrotechnik Mainz Gmbh Herstellungsverfahren von teilbeweglichen Mikrostrukturen auf der Basis einer trockenchemisch geätzten Opferschicht
KR0165370B1 (ko) * 1995-12-22 1999-02-01 김광호 차아지 업에 의한 반도체장치의 손상을 방지하는 방법
US5856914A (en) * 1996-07-29 1999-01-05 National Semiconductor Corporation Micro-electronic assembly including a flip-chip mounted micro-device and method
TW480636B (en) * 1996-12-04 2002-03-21 Seiko Epson Corp Electronic component and semiconductor device, method for manufacturing and mounting thereof, and circuit board and electronic equipment
US6107578A (en) * 1997-01-16 2000-08-22 Lucent Technologies Inc. Printed circuit board having overlapping conductors for crosstalk compensation
US7714235B1 (en) * 1997-05-06 2010-05-11 Formfactor, Inc. Lithographically defined microelectronic contact structures
GB2350931B (en) * 1997-06-27 2001-03-14 Nec Corp Method of manufacturing semiconductor device having multilayer wiring
JP3390329B2 (ja) 1997-06-27 2003-03-24 日本電気株式会社 半導体装置およびその製造方法
JP2007073834A (ja) * 2005-09-08 2007-03-22 Shinko Electric Ind Co Ltd 絶縁樹脂層上の配線形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0019391A1 (en) * 1979-05-12 1980-11-26 Fujitsu Limited Improvement in method of manufacturing electronic device having multilayer wiring structure

Also Published As

Publication number Publication date
JPS4841259A (en]) 1973-06-16
US3846166A (en) 1974-11-05

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